View newly published Online Version of Record articles before inclusion in an issue. If you no longer wish to receive these alerts, unsubscribe here . IET Power Electronics Early View Online Version of Record before inclusion in an issue Open Access ORIGINAL RESEARCH Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor Hangzhi Liu, Shiwei Liang, Yuming Zhou, Jun Wang Version of Record online: 08 May 2024 In this study, the authors provide an improved and updated comprehension on Silicon Carbide (SiC) Gate Turn-off (GTO)'s turn-on transient by means of integrated muti-cell TCAD simulations. By means of the physical characterization conducted in this p...
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