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Open Access ORIGINAL RESEARCH
Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor
Version of Record online: 08 May 2024
In this study, the authors provide an improved and updated comprehension on Silicon Carbide (SiC) Gate Turn-off (GTO)'s turn-on transient by means of integrated muti-cell TCAD simulations. By means of the physical characterization conducted in this paper, the physical mechanisms dominating chip device's current inhomogeneity are uncovered in depth, and the method of enhancing the current homogeneity among cells is proposed and extensively discussed. Furthermore, based on the conducted analysis above, the most possible reason for the extremely current rising transient during the initial pulsed current stage of SiC GTO thyristor is subsequently speculated and experimentally verified.
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