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Open Access

ORIGINAL RESEARCH

Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

Jiafei Yao, Yuao Liu, Ang Li, Xue Han, Qing Yao, Kemeng Yang, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo

Version of Record online: 23 April 2024

A novel 4H-SiC trench MOSFET with integrated high-K deep trench and gate dielectric (INHK-TMOS) is proposed. The modulation effect of the high-K gate dielectric and extended high-K deep trench dielectric improves the device performances significantly. The results show that the INHK-TMOS breaks the SiC limit, indicating that the conflicting relationship between breakdown voltage and R_on,sp is effectively alleviated.

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