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Open Access

ORIGINAL RESEARCH

Automatic optimal design of field plate for silicon on insulator lateral double‐diffused metal oxide semiconductor using simulated annealing algorithm

Jing Chen, Renji Xia, Jinwen You, Qing Yao, Yuxuan Dai, Jun Zhang, Jiafei Yao, Yufeng Guo

Version of Record online: 12 February 2024

In this paper, an automatic optimal design method for field plate (FP) in silicon on insulator lateral double-diffused metal oxide semiconductor using simulated annealing algorithm is proposed. For a given device structure, the framework can automatically design the FP geometry parameters within the definite range that maximizes the device breakdown voltage without human intervention. Meanwhile, the optimization process can be finished in a few seconds.

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